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Please find below some publications of Flowchart Support

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Carbon Nanotubes:

  • Vollebregt, S, Tichelaar, FD, Schellevis, H, Beenakker, CIM & Ishihara, R (2014). Carbon nanotube vertical interconnects fabricated at temperatures as low as 350 °C. Carbon, 71, 249-256.
  • Vollebregt, S, Schellevis, H, Beenakker, CIM & Ishihara, R (2013). Carbon nanotube vias fabricated at back-end of line compatible temperature using a novel CoAl catalyst. In S Ogawa (Ed.), 2013 IEEE International Interconnect Technology Conference - Digest of technical papers (pp. 1-3). Piscataway, NJ, USA: IEEE.
  • Vollebregt, S, Chiaramonti, AN, Ishihara, R, Schellevis, H & Beenakker, CIM (2012). Contact resistance of low-temperature carbon nanotube vertical interconnects. In K Jiang (Ed.), 2012 12th IEEE Conference on Nanotechnology (IEEE-NANO) (pp. 1-5). Piscataway: IEEE.
  • Vollebregt, S, Ishihara, R, Derakhshandeh, J, Cingel, J van der, Schellevis, H & Beenakker, CIM (2011). Integrating low temperature aligned carbon nanotubes as vertical interconnects in Si technology. In JE Morris, S Rung & S Goodnick (Eds.), 11th IEEE International Conference on Nanotechnology (NANO 2011) (pp. 985-990). Portland, OR, USA: IEEE.
  • Vollebregt, S, Ishihara, R, Cingel, J van der, Schellevis, H & Beenakker, CIM (2011). Electrical characterisation of low temperature aligned carbon nanotubes for vertical interconnects. In A Smeulders, R van der Drift, F Karelse & D Stroobandt (Eds.), ICT.OPEN: Micro technology and micro devices (SAFE 2011) (pp. 1-1). Veldhoven, The Netherlands: STW.
  • Saadaoui, M, Wien, WHA, Zeijl, HW van, Schellevis, H, Laros, M & Sarro, PM (2008). Front to back-side 3D interconnects fabrication process based on controlled Cu electroplating of high aspect ratio through silicon vias (HAR-TSVs). In T Yang & T Kheng (Eds.), 10th electronics packaging technology conference (pp. 219-223). Singapore: IEEE.
  • Saadaoui, M, Wien, WHA, Zeijl, HW van, Schellevis, H, Laros, M & Sarro, PM (2007). Local Sealing of High Aspect Ratio Vias for Single Step Bottom-up Copper Electroplating of Through Wafer Interconnects. In B Mizaikoff & PJ French (Eds.), Proc. IEEE Sensors 2007 Conference (pp. 974-977). Atlanta, Georgia: IEEE.
  • Wang, Z, Wang, L, Schellevis, H, Wien, WHA, Burghartz, JN & Sarro, PM (2003). Through-wafer electrical vias for RF silicon technology. In s.n. (Ed.), SAFE 2003 Proceedings of semiconductor advances for future electronics (pp. 761-765). Utrecht: Stichting voor de Technische Wetenschap.
  • Wang, L, Nichelatti, A, Schellevis, H, Boer, CR de, Visser, CCG, Nguyen, NT & Sarro, PM (2003). High aspect ratio through-wafer interconnections for 3D-microsystems. In s.n. (Ed.), MEMS 2003 16th IEEE international micro electronic mechanical systems conference (pp. 634-637). Piscataway: IEEE.
  • La Spina, L, Iborra, E, Schellevis, H, Clement, M, Olivares, J & Nanver, LK (2008). Aluminum nitride for heatspreading in RF IC’s. Solid-State Electronics, 52(9), 1359-1363.
  • La Spina, L, Marano, I, Alessandro, V d', Schellevis, H & Nanver, LK (2008). Aluminium-nitride thin-film heatspreaders integrated in bipolar transistors. In LJ Ernst, GQ Zhang, WD van Driel & O de Saint Leger (Eds.), IEEE international conference on thermal, mechanical and multi-physics simulation and experiments in microelectronics and micro-systems (pp. 99-103). s.l.: IEEE.
  • La Spina, L, Nanver, LK, Iborra, E, Clement, M, Olivares, J & Schellevis, H (2007). Characterization of PVD Aluminum Nitride for Heat Spreading in RF IC’s. In s.n. (Ed.), Proc. IEEE ESSDERC 2007 (pp. 354-357). Munich, Germany: IEEE.
  • La Spina, L, Nanver, LK & Schellevis, H (2007). Aluminium Nitride Layers: One Way to Beat the Heat in Silicon-On-Glass Technology. In s.n. (Ed.), SAFE 2007 Semiconductor advances for future electornics (pp. 1-4). s.l.: STW.
  • La Spina, L, Schellevis, H, Nenadovic, N & Nanver, LK (2006). PVD Aluminium Nitride as Heat Spreader in Silicon-On-Glass Technology. In s.n. (Ed.), Proceedings of IEEE International Conference on Microelectronics (pp. 365-368). Belgrade, Serbia: Electron Device Society.
  • La Spina, L, Panwar, S, Schellevis, H & Nanver, LK (2006). Electrical Characterization of PVD Aluminum Nitride Deposited on Silicon. In s.n (Ed.), Proceedings of 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (pp. 470-474). Veldhoven, The Netherlands: s.l..
  • Schellevis, H, Spina, L la, Nenadovic, N & Nanver, LK (2005). Reactive sputter deposition of aluminium nitride thin films as heat spreaders in IC processes. In s.n. (Ed.), Proceedings of the conference "Reactive sputter processes and related phenomena" (pp. 1-1). Delft: Nevac, Belvac, TU Delft.
  • Spina, L la, Schellevis, H, Nenadovic, N, Milosavljevic, S, Wien, WHA, Herwaarden, AW van & Nanver, LK (2005). PVD aluminium nitride as heat-spreader in IC technology. In s.n. (Ed.), Proceedings of the STW annual workshop on semiconductor advances for future electronics and sensors (SAFE 2005) (pp. 113-116). Utrecht, The Netherlands: STW.
  • Hajas, I, Schellevis, H & Nanver, LK (2004). Sputtered aluminum-nitride for integration in IC processes. In SAFE & ProRISC 2004; Proceedings of semiconductor advances for future electronics (pp. 643-646). Utrecht: STW Technology Foundation.

High-temperature micro hotplates:

  • Mele, L, Santagata, F, Iervolino, E, Mihailovic, M, Rossi, T, Tran, AT, Schellevis, H, Creemer, JF, Sarro, PM & Sarro, PM (2012). A molybdenum MEMS microhotplate for high-temperature operation. Sensors and Actuators A: Physical: an international journal devoted to research and development of physical and chemical transducers, 188, 1-8.
  • Mele, L, Santagata, F, Iervolino, E, Mihailovic, M, Rossi, T, Tran, AT, Schellevis, H, Creemer, JF & Sarro, PM (2011). Sputtered molybdenum as conductive material for high-temperature microhotplates. In L-S Fan et al (Ed.), Technical Digest of the 16th International Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS 2011) (pp. 2690-2693). Piscatawaay, NJ, USA: IEEE.
  • Creemer, JF, Sarro, PM, Laros, M, Schellevis, H, Nathoeni, T, Steenweg, LA, Svetchnikov, V & Zandbergen, HW (2004). Titanium nitride for MEMS hotplates. In W Krautschneider & C Claeys (Eds.), SAFE 2004; Semiconductor advances for future electronics (pp. 742-746). Utrecht: STW Technology Foundation.
  • Creemer, JF, Sarro, PM, Laros, M, Schellevis, H, Steenweg, LA & Zandbergen, HW (2004). TiN for MEMS otplate heaters. Proceedings of Eurosensors XVIII: Rome, Italy (2004, September 12 - 2004, September 15).

Piezoelectric cantilever technology_AlN:

  • Tran, AT, Pandraud, G, Tichelaar, FD, Nguyen, MD, Schellevis, H & Sarro, PM (2013). The extraordinary role of the AlN interlayer in growth of AlN sputtered on Ti electrodes. Applied Physics Letters, 103(22), 221909-1-221909-3.
  • Tran, AT, Wunnicke, O, Pandraud, G, Nguyen, MD, Schellevis, H & Sarro, PM (2013). Slender piezoelectric cantilevers of high quality AlN layers sputtered on Ti thin film for MEMS actuators. Sensors and Actuators A: Physical: an international journal devoted to research and development of physical and chemical transducers, 202 (November), 118-123.
  • Tran, AT, Moh, TSY, Pandraud, G, Schellevis, H, Akhnoukh, AB & Sarro, PM (2013). Shear mode resonators based on aluminum nitride round membranes with a ring-shaped electrode. In JR Morante & C Hierold (Eds.), Proceedings 17th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXVII (pp. 1396-1399). Piscataway, NJ, USA: IEEE.
  • Tran, AT, Pandraud, G, Schellevis, H & Sarro, PM (2012). Enhancement of AlN slender piezoelectric cantilevers actuation by PECVD silicon nitride coating. In R Walczak, J Dziuban & R Walczak (Eds.), Procedia Engineering - Proceedings 26th European Conference on Solid-State Transducers, EUROSENSOR 2012 Vol. 47. Procedia Engineering (pp. 104-107). Amsterdam, The Netherlands: Elsevier.
  • Tran, AT, Pandraud, G, Nie, M, Schellevis, H, Akhnoukh, A, Purniawan, A & Sarro, PM (2012). Encapsulated aluminum nitride SAW devices for liquid sensing applications. In Proc. 11th IEEE Sensors Conference (pp. 604-607). Taipei: IEEE.
  • Tran, AT, Pandraud, G, Schellevis, H, Alan, T, Aravindh, V, Wunnicke, O & Sarro, PM (2011). Fabrication of AlN slender piezoelectric cantilevers for high-speed MEMS actuations. In C Tsamis & G Kaltas (Eds.), Proceedings Eurosensors XXV, September 4-7, 2011, Athens, Greece Vol. 25. Procedia Engineering (pp. 673-676). Athens, Greece: Elsevier.
  • Tran, AT, Schellevis, H, Pham, HTM, Shen, C & Sarro, PM (2010). Influence of seed layer on crystallity and orientation of pulsed. In B. Jacoby & M. Vellekoop (Eds.), Proceedings Eurosensors XXIV Vol. 5. Procedia Engineering (pp. 886-889). Amsterdam: Elsevier.
  • Tran, AT, Schellevis, H, Shen, C, Pham, HTM & Sarro, PM (2010). Characterization of AlN thin films sputtered on Al Ti electrodes for piezoelectric devices. In PJ French et al (Ed.), Proceedings STW-SAFE 2010 (pp. 121-124). Veldhoven, The Netherlands: STW.

RF passives:

  • Iramnaaz, I, Schellevis, H, Rejaei, B, Fitch, R & Zhuang, Y (2012). Self-biased low loss conductor featured with skin effect suppression for high quality RF passives. IEEE Transactions on Magnetics, 48(11), 4139-4142.
  • Iramnaaz, I, Schellevis, H, Rejaei, B, Fitch, R & Zhuang, Y (2012). High-quality integrated inductors based on multilayered meta-conductors. IEEE Microwave and Wireless Components Letters, 22(7), 345-347.
  • Iramnaaz, I, Sandoval, T, Zhuang, Y, Schellevis, H & Rejaei, B (2011). High quality factor RF inductors using low loss conductor featured with skin effect suppression for standard CMOS/BiCMOS. In R Dias & D McCann (Eds.), IEEE 61st Electronic Components and Technology Conference (ECTC 2011) (pp. 163-168). Lake Buena Vista, FL, USA: IEEE.
  • Nanver, LK, Schellevis, H, Scholtes, TLM, La Spina, L, Lorito, G, Sarubbi, F, Gonda, V, Popadic, M , Buisman, K, Vreede, LCN de, Huang, C , Milosavljevic, S & Goudena, EJG (2009). Improved RF devices for future adaptive wireless systems using two-sided contacting and AIN cooling. IEEE Journal of Solid State Circuits, 44(9), 2322-2338.
  • Nanver, LK, Schellevis, H, Scholtes, TLM, La Spina, L, Lorito, G, Sarubbi, F, Gonda, V, Popadic, M , Buisman, K, Vreede, LCN de, Huang, C , Milosavljevic, S & Goudena, EJG (2008). RF/microwave device fabrication in silicon-on-glass technology. In N Stojadinovic (Ed.), Proc. 26th international conference on microelectronics (pp. 273-280). Nis, Serbia: IEEE.
  • Zhuang, Y, Rejaei Salmassi, B, Schellevis, H, Vroubel, M & Burghartz, JN (2008). Magnetic-multilayered interconnects featuring skin effect suppression. IEEE Electron Device Letters, 29(4), 319-321.
  • Huang, C , Buisman, K, Nanver, LK, Sarubbi, F , Popadic, M , Scholtes, TLM, Schellevis, H, Larson, L & Vreede, LCN de (2008). A 67 dBm OIP multi-stacked junction varactor. IEEE Microwave and Wireless Components Letters, 18(11), 749-751.
  • Khalili Amiri, P, Zhuang, Y, Schellevis, H, Ma, Y , Rejaei Salmassi, B, Vroubel, M & Burghartz, JN (2007). Ultra-high-resistivity nano-granular Co-Al-O films for high-frequency applications. In n.s. (Ed.), Book of abstracts of the 10th Joint Magnetism and Magnetic Materials and IEEE International Magnetics Conference (pp. 165-165). Piscataway: IEEE.
  • Khalili Amiri, P, Zhuang, Y, Schellevis, H, Rejaei Salmassi, B, Vroubel, M, Ma, Y & Burghartz, JN (2007). High-resistivity nanogranular Co–Al–O films for high-frequency applications. Journal of Applied Physics, 101(9), 09M508/1-09M508/3.
  • Nanver, LK, Schellevis, H, Scholtes, TLM, La Spina, L, Lorito, G, Sarubbi, F, Gonda, V, Popadić, M, Buisman, K, de Vreede, LCN, Huang, C , Milosavljevic, S & Goudena, EJG (2006). Silicon-on-glass technology for RF and microwave device fabrication. In s.n. (Ed.), 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (pp. 162-165). Shanghai, China: IEEE press.
  • Burghartz, JN, Rejaei Salmassi, B & Schellevis, H (2004). Saddle add-on metallization for RF-IC technology. IEEE Transactions on Electron Devices, 51(3), 460-466. abstract
  • Rejaei Salmassi, B, Burghartz, JN & Schellevis, H (2002). Saddle add-on metallisation (SAM) for RF inducator implementation in standard IC interconnects. In IEDM 2002 IEEE International Electron Devices Meeting (pp. 1-4). Piscataway, NJ. USA: IEEE.

varactor diode:

  • Huang, C , Buisman, K, Nanver, LK, Sarubbi, F , Popadic, M , Scholtes, TLM & Schellevis, H (2009). Ultra linear low-loss varactor diode configurations for adaptive RF systems. IEEE Transactions on Microwave Theory and Techniques, 57(1), 205-215.
  • Nanver, LK, Gonda, V, Civale, Y, Scholtes, TLM, La Spina, L, Schellevis, H, Lorito, G, Sarubbi, F , Popadic, M , Buisman, K, Milosavljevic, S & Goudena, EJG (2008). Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/microwave technology. In T.-A. Tang, H Ru, Y Min & A Xia (Eds.), Proc. 9th international conference on solid-state and integrated circuit technology (pp. 1-4). s.l.: ICSICT.
  • Buisman, K, Nanver, LK, Scholtes, TLM, Schellevis, H & Vreede, LCN de (2005). High-performance varactor diodes integrated in a silicon-on-glass technology. In G Ghibaudo, T Skotnicki, S Cristoloveanu & M Brillouet (Eds.), Proceedings of the 35th European solid-state device research conference (ESSDERC) (pp. 117-120). Piscataway: IEEE.

VDMOSFETs:

  • Nenadovic, N, Schellevis, H, Cuoco, V, Griffo, A, Theeuwen, SJCh, Nanver, LK, Jos, HFF & Slotboom, JW (2005). Electrothermal characterization of silicon-on-glass VDMOSFETs. Microelectronics Reliability, 45(3-4), 541-550. abstract
  • Nenadovic, N, Cuoco, V, Theeuwen, SJC, Schellevis, H, Spierings, G, Griffo, A, Pelk, M J, Nanver, LK, Jos, HFF & Slotboom, JW (2004). RF power silicon-on-glass VDMOSFETs. IEEE Electron Device Letters, 25(6), 424-426.
  • Nenadovic, N, Mijalkovic, S, Nanver, LK, Vandamme, LKJ, Alessandro, V d', Schellevis, H & Slotboom, JW (2004). Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors. IEEE Journal of Solid State Circuits, 39(10), 1764-1772.
  • Nenadovic, N, Schellevis, H, Cuoco, V, Griffo, A, Theeuwen, SJCh, Nanver, LK, Jos, HFF & Slotboom, JW (2004). Electrothermal characterization of silicon-on-glass VDMOSFETs. In N Stojadinovic & S Dimitrijev (Eds.), Proceedings 2004 24th International Conference on Microelectronics (MIEL 2004) (pp. 145-148). Piscataway: IEEE.
  • Nanver, LK, Nenadovic, N, Alessandro, V d', Schellevis, H, Zeijl, HW van, Dekker, R, Mooij, DB de, Zieren, V & Slotboom, JW (2004). A back-wafer contacted silicon-on-glass integrated bipolar process - Part I: the conflict electrical versus thermal isolation. IEEE Transactions on Electron Devices, 51(1), 42-50.

  • Nenadovic, N, Mijalkovic, S, Tamigi, F, Nanver, LK, d'Alessandro, V, Schellevis, H & Slotboom, JW (2003). Extraction of thermal network function for bipolar RF devices and ICs. In M Miloševic, Z Jakšic, D Božic & V Potkonjak (Eds.), ETRAN 2003; Proceedings of the XLVII Conference (pp. 225-228). Beograd: Society for Electronics, ....

  • Nenadovic, N, Mijalkovic, S, Nanver, LK, Vandamme, LKJ, Schellevis, H, Alessandro, V d' & Slotboom, JW (2003). Extraction and modelling of self-heating and mutual thermal coupling of bipolar transistors. In Bipolar/BiCMOS Circuits and Technology, IEEE Conference (pp. 1-4). Piscataway: IEEE.
  • Nenadovic, N, Nanver, LK, Schellevis, H, Mooij, D de, Zieren, V & Slotboom, JW (2002). Sensitive measurement method for evaluation of high thermal resistance in bipolar transistors. In ICMTS 2002 IEEE 2002 International Conference on Microelectronic Test Structures (pp. 77-82). Piscataway, NJ. USA: IEEE.
  • Nenadovic, N, d'Alessandro, V, Schellevis, H, Boellard, L & Nanver, LK (2002). Self-heating in SOA. PACD Project A3 june 2002. Delft: ECTM/Dimes.
  • Tamigi, F, Mijalkovic, S, Nanver, LK, Nenadovic, N, Schellevis, H, d'Alessandro, V, Rinaldi, N & Burghartz, JN (2002). Parameter extraction for electro-thermal modeling of bipolar transistors. In SAFE 2002 Proceedings of 5th Semiconductor Advances for Future Electronics Workshop (pp. 112-116). Utrecht: STW Technology Foundation.
  • d'Alessandro, V, Nenadovic, N, Tamigi, F, Nanver, LK, Schellevis, H & Slotboom, JW (2002). Detection of thermal runaway and extraction of thermal resistance in silicon-on-glass NPN BJTs using the Vcb-Vbe voltage plane. In SAFE 2002 Proceedings of 5th Semiconductor Advances for Future Electronics Workshop (pp. 22-29). Utrecht: STW Technology Foundation.
  • Nenadovic, N, d'Alessandro, V, Nanver, LK, Rinaldi, N, Schellevis, H & Slotboom, JW (2002). Analytical formulation and electrical measurements of self-heating in silicon BJT's. In IEEE BCTM 2002 IEEE Bipolar Circuits and Technology Meeting (pp. 24-27). Piscataway, NJ. USA: IEEE.
  • Nenadovic, N, Nanver, LK, Schellevis, H, Zeijl, HW van & Slotboom, JW (2001). Thermal issues in a backwafer contacted silicon-on-glass integrated bipolar process. In GE Ponchak (Ed.), Proceedings (pp. 114-121). Piscataway: IEEE.
  • Nenadovic, N, Mijalkovic, S, Nanver, LK, Vandamme, LKJ, Schellevis, H, Alessandro, V d' & Slotboom, JW (2003). Extraction and modelling of self-heating and mutual thermal coupling of bipolar transistors. In Bipolar/BiCMOS Circuits and Technology, IEEE Conference (pp. 1-4). Piscataway: IEEE.
  • Nenadovic, N, Nanver, LK, Schellevis, H, Mooij, D de, Zieren, V & Slotboom, JW (2002). Sensitive measurement method for evaluation of high thermal resistance in bipolar transistors. In ICMTS 2002 IEEE 2002 International Conference on Microelectronic Test Structures (pp. 77-82). Piscataway, NJ. USA: IEEE.
  • Nenadovic, N, d'Alessandro, V, Schellevis, H, Boellard, L & Nanver, LK (2002). Self-heating in SOA. PACD Project A3 june 2002. Delft: ECTM/Dimes.
  • d'Alessandro, V, Nenadovic, N, Tamigi, F, Nanver, LK, Schellevis, H & Slotboom, JW (2002). Detection of thermal runaway and extraction of thermal resistance in silicon-on-glass NPN BJTs using the Vcb-Vbe voltage plane. In SAFE 2002 Proceedings of 5th Semiconductor Advances for Future Electronics Workshop (pp. 22-29). Utrecht: STW Technology Foundation.
  • Nenadovic, N, d'Alessandro, V, Nanver, LK, Rinaldi, N, Schellevis, H & Slotboom, JW (2002). Analytical formulation and electrical measurements of self-heating in silicon BJT's. In IEEE BCTM 2002 IEEE Bipolar Circuits and Technology Meeting (pp. 24-27). Piscataway, NJ. USA: IEEE.
  • Nenadovic, N, Nanver, LK, Schellevis, H, Zeijl, HW van & Slotboom, JW (2001). Thermal issues in a backwafer contacted silicon-on-glass integrated bipolar process. In GE Ponchak (Ed.), Proceedings (pp. 114-121). Piscataway: IEEE.
  • Nenadovic, N, Nanver, LK, Schellevis, H, Zeijl, HW van & Slotboom, JW (2001). Electrothermal characterization of NPNs fabricated in a backwafer contacted silicon-on glass integrated bipolar process. In SAFE 2001: proceedings CD-ROM (pp. 123-131). Utrecht: STW technology foundation.
  • Nanver, LK, Zeijl, HW van, Schellevis, H, Mallee, RJM, Slabbekoorn, JHCM, Dekker, R & Slotboom, JW (1999). Ultra-low-temperature low-ohmic contacts for SOA applications. In BCTM proceedings (pp. 137-140). Piscataway: IEEE.
  • Nanver, LK, Ren, Q, Mallee, RJM, Slabbekoorn, JHCM, Bertens, GJ, Goudena, EJG, Berg, MR van den, Schellevis, H, Zeijl, HW van, Scholtes, TLM & Oever, LCM van (1999). Potential use of laser annealing in semiconductor processing [op CD-Rom verschenen]. In G Zweier (Ed.), Proceedings (pp. 214-221). S.l.: S.n..